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Same color defects as the normal Foveon, but very slightly increased QE in long wave (red). Not a very interesting patent, more of an exercise. It is actually almost 100% identical to all other "foveon" type patents, except for the inclusion of a red/near-IR trap.
Though, the patent is already covered by several others, including Sony, Aptina, Toshiba, Samsung - they all already HAVE some kind of implementation of the said patent already in production. The main part of the patent is "just" a manufacturing method for a known principle of depth diffusion limitation. Several deep IR sensors already use this type of resonant gating.
The only way layered sensors can move forward is by circumventing the very flawed base principle of Foveon (depth diffusion filtering). To my surprise, no-one has shown any further demos with silicon photodiode + nanodot cover two-layer solutions. Two years ago I saw some VERY promising work there, where a manufacturer implied that the only remaining problem was physical stability over time. They did/do not want an aging problem in a very expensive first product.